金属氧化物半导体场效应晶体管(Mos)可分为两类:n通道和p通道。p通道硅Mos场效应晶体管在n型硅衬底上有两个p区,即源电极和漏电极。改变栅压可以改变沟道中的空穴密度,从而改变沟道的电阻。这种MOS场效应晶体管称为P沟道增强型场效应晶体管。如果n型硅衬底表面上的n-表面存在p型逆层通道。这样的MOS场效应晶体管称为P沟道耗尽型场效应晶体管。统称为PMOS晶体管。
2022-12-07 14:52:38
2024-04-18 12:08:45
2024-03-08 11:29:09
2023-01-10 09:13:48
2024-03-15 16:45:40
2024-04-15 23:04:02
2024-04-04 21:42:17
2022-10-19 14:49:49
2022-06-06 11:43:56
2022-06-23 08:44:53
2023-03-23 15:07:48
2024-03-26 03:33:10
2024-04-14 04:54:57
2024-04-05 11:53:36
2024-04-19 03:11:48
2024-03-16 20:32:04
2023-01-13 09:07:37
2022-08-24 09:36:30
2024-04-18 00:10:32
2022-08-29 15:23:14
2024-03-20 23:36:11
2024-03-19 04:28:01
2023-03-29 11:05:06
2021-11-09 08:38:47
2024-03-16 02:03:21
2024-04-04 22:53:35
2024-04-16 03:16:17
2022-10-29 16:58:50
2024-03-30 11:40:13
2024-04-15 17:19:50
2021-10-22 15:10:33
2024-03-13 23:12:29
2024-04-18 15:28:05
2021-11-23 14:56:14
2020-10-27 15:37:07
2024-04-14 21:20:10
2024-04-03 02:02:40
2024-04-08 13:17:40
2024-04-10 17:05:09
2024-03-19 23:01:13
2021-09-07 11:47:15
2024-04-16 15:43:16
2024-03-15 06:38:33
2024-04-13 05:32:04
2024-04-16 10:46:27
2024-04-08 11:51:19
2023-04-17 10:06:45
2022-10-28 13:59:13
2023-03-03 11:49:24
2022-08-24 08:35:06